研究生培养
您当前位置:首页 > 研究生培养 > 导师介绍

贾博文

发布时间:2021-12-29
 

best365英国体育在线博∕硕士导师信息表 

  姓  名: 

  贾博文 

  性  别: 

   

  出生年月: 

  1987年2月 

  职  称: 

  副教授 

  学历学位: 

  研究生/博士 

  联系方式: 

  jiabowen@whut.edu.cn 

  研究方向: 

硅基光电子、光探测器、集成光电子学

  主要学术经历: 

2018/12-至今,武汉理工大学,best365英国体育在线,副教授

2018/05-2018/11,武汉理工大学,best365英国体育在线,讲师

2013/08-2018/02,新加坡南洋理工大学,电气电子工程学院,博士

2009/09-2012/06,浙江大学,材料科学与工程工学院,硕士 

2005/09-2009/06,武汉理工大学,材料科学与工程工学院,学士

  主要学术成果: 

1.B.W. Jia*, K.H. Tan, W.K. Loke, S. Wicaksono, and S.F. Yoon, “Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer”, Journal of Crystal Growth 2018, 490, 97-103. (SCI IF 1.797, JCR Q3)

2.B.W. Jia*, K.H. Tan, W.K. Loke, S. Wicaksono, and S.F. Yoon, “Integration of InSb photodetector on Si via heteroepitaxy for mid-infrared wavelength region”, Optics Express 2018, 26 (6), 7227-7234. (SCI IF 3.894, JCR Q1)

3.B.W. Jia*, K.H. Tan, W.K. Loke, S. Wicaksono, K.H. Lee and S.F. Yoon, “Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics”, ACS Photonics 2018, 5 (4), 1512-1520. (SCI IF 7.529, JCR Q1)

4.B.W. Jia*, K.H. Tan, W.K. Loke, S. Wicaksono, and S.F. Yoon, “Growth and characterization of InSb on (100) Si for mid-infrared application”, Applied Surface Science, 2018, 440, 939-945. (SCI IF 6.707, JCR Q1)

5.B.W. Jia*, K.H. Tan, W.K. Loke, S. Wicaksono, and S.F. Yoon, “Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array”, Applied Surface Science, 2018, 427, 876-883. (SCI IF 6.707, JCR Q1) 

6.B.W. Jia*, K.H. Tan, W.K. Loke, S. Wicaksono, and S.F. Yoon, “Effects of surface reconstruction on the epitaxial growth of III-Sb on GaAs using interfacial misfit array”, Applied Surface Science, 2017, 399, 220-228. (SCI IF 6.707, JCR Q1) 

7.B.W. Jia*, K.H. Tan, W.K. Loke, S. Wicaksono, and S.F. Yoon, “Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange”, Journal of Applied Physics, 2016, 120 (3), 035301. (SCI IF 2.176, JCR Q2) 

8.B.W. Jia*, K.H. Tan, W.K. Loke, S. Wicaksono, and S.F. Yoon, “Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations”, Materials Letters, 2015, 158, 258-261. (SCI IF 2.687, JCR Q2)

9.K.H. Tan, B.W. Jia, W.K. Loke, S Wicaksono, S.F. Yoon,“Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process”,Journal of Crystal Growth,2015,427,80-86. (SCI IF 1.797, JCR Q3)

10.S. Yadav, K.H. Tan, Annie, K.H. Goh, S. Subramanian, K.L. Low, N.Y. Chen, B.W. Jia, S.F. Yoon, G.C. Liang, G. Xiao, Y.C. Yeo,“First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules” 2015 IEEE International Electron Devices Meeting (IEDM), 2015, 2.3.1-2.3.4.

11.贾博文,胡群强,汪博文,一种感知天气的智能天窗控制系统,2020.5.26,中国,发明专利,ZL202010452971.5

  主要在研项目: 

1.国家自然科学基金青年科学基金项目,62104174,硅基异质外延生长波导集成型InAs中红外探测器研究,主持

2.湖北省自然科学基金青年项目,2021CFB054,集成超表面的硅基铟化物中红外探测器研究,主持

3.2019年度“武汉黄鹤英才”优秀青年人才入选者,主持

4.中央高校基本科研业务经费,主持

5.新加坡国家研究基金会(NRF)竞争性研究项目,低功耗电子和高性能光子器件的异质集成,主要参与

   

附件:

  
Baidu
sogou